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[Nano] Highly Asymmetric n+–p Heterojunction Quantum‐Dot Solar Cells with Significantly Improved Charge‐Collection Efficiencies (Advanced Material, 2015)
작성자 Min‐Jae Choi et al. 작성일 15/12/21 (00:00) 조회수 977

Highly Asymmetric n+–p Heterojunction Quantum‐Dot Solar Cells with Significantly Improved Charge‐Collection Efficiencies

Min‐Jae Choi, Sunchuel Kim, Hunhee Lim, Jaesuk Choi, Dong Min Sim, Soonmin Yim, Byung Tae Ahn, Jin Young Kim, Yeon Sik Jung*

The depletion region width of metal‐oxide/quantum‐dot (QD) heterojunction solar cells is increased by a new method in which heavily boron‐doped n+‐ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n‐ZnO, and provides 41% and 37% improvement of Jsc (16.7 mA cm−2 to 23.5 mA cm−2) and power conversion efficiency (5.52% to 7.55%), respectively.

Advanced Material